A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

被引：0

作者：

Liu, WC ^{[1
]}

Cheng, SY ^{[1
]}

Pan, HJ ^{[1
]}

Chen, JY ^{[1
]}

Wang, WC ^{[1
]}

Feng, SC ^{[1
]}

Yu, KH ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期

关键词：

D O I：

10.1051/jp4:19998144

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a delta-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

引用

页码：1155 / 1161

页数：7

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