A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

被引：0
|
作者：
Liu, WC [1 ]
Cheng, SY [1 ]
Pan, HJ [1 ]
Chen, JY [1 ]
Wang, WC [1 ]
Feng, SC [1 ]
Yu, KH [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
来源：
JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期
关键词：
D O I：
10.1051/jp4:19998144
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a delta-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
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收藏
页码：1155 / 1161
页数：7
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