Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells

被引：8
|
作者：
Sun, Guan [1 ,2 ]
Chen, Ruolin [1 ,2 ]
Ding, Yujie J. [1 ,2 ]
Zhao, Hongping [3 ]
Liu, Guangyu [1 ,2 ]
Zhang, Jing [1 ,2 ]
Tansu, Nelson [1 ,2 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
[2] Lehigh Univ, Ctr Opt Technol, Bethlehem, PA 18015 USA
[3] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2013年 / 19卷 / 01期
基金：
美国国家科学基金会;
关键词：
Broadband terahertz (THz) wave; InGaN/GaN quantum wells (QWs); built-in field; dipole radiation; photoluminescence (PL); LIGHT-EMITTING-DIODES; SPONTANEOUS EMISSION; TEMPERATURE; EXCITATION; LASER;
D O I：
10.1109/JSTQE.2012.2218093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated photoluminescence (PL) and terahertz (THz) generation simultaneously from multiple InGaN/GaN quantum wells (QWs) with different well periods. The PL intensity fully saturates when the period of QWs is increased up to 4. However, THz output power continuously scales up even if the period of QWs is increased up to 16. Such a behavior indicates that high-power THz wave can be generated without efficient recombination of the photogenerated carriers, since THz is only generated during the absorption process. Following the measurements of intensity and peak energy of PL together with output power and spectra of THz, we have concluded that the screening effect induced by photo-generated carriers can be neglected when the pump fluence is as low as 85 mu J/cm(2).
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页码：6 / 11
页数：6
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