Strikingly Different Behaviors of Photoluminescence Intensity and Terahertz Output Power versus Period of InGaN/GaN Quantum Wells

被引：0
|
作者：
Sun, Guan [1 ]
Chen, Ruolin [1 ]
Ding, Yujie J. [1 ]
Zhao, Hongping [1 ]
Liu, Guangyu [1 ]
Zhang, Jing [1 ]
Tansu, Nelson [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
来源：
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年
关键词：
GENERATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly. (C) 2012 Optical Society of America
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