Characterization of Bulk Damage in CMOS MAPS With Deep N-Well Collecting Electrode

被引：9
|
作者：
Zucca, Stefano [1 ,2 ]
Ratti, Lodovico [1 ]
Traversi, Gianluca [3 ,4 ]
Bettarini, Stefano [5 ,6 ]
Morsani, Fabio [6 ]
Rizzo, Giuliana [5 ,6 ]
Bosisio, Luciano [7 ,8 ]
Rashevskaya, Irina [7 ,8 ]
Cindro, Vladimir [9 ]
机构：
[1] INFN Pavia, I-27100 Pavia, Italy
[2] Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy
[3] Univ Bergamo, I-24044 Dalmine, BG, Italy
[4] INFN Pavia, I-24044 Dalmine, BG, Italy
[5] Univ Pisa, I-56127 Pisa, Italy
[6] INFN Pisa, I-56127 Pisa, Italy
[7] INFN Trieste, I-34127 Trieste, Italy
[8] Univ Trieste, I-34127 Trieste, Italy
[9] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 04期
关键词：
Bulk damage; charge collection efficiency; CMOS MAPS; deep N-well sensor; ACTIVE PIXEL SENSORS; DISPLACEMENT DAMAGE; SILICON DETECTORS; RADIATION; DEVICES; DIODES;
D O I：
10.1109/TNS.2012.2189017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic active pixel sensors in CMOS technology, featuring a deep N-well as the collecting electrode (so called DNW MAPS), have been exposed to neutrons from a nuclear reactor, up to a total 1 MeV neutron equivalent fluence of about 3.7 x 10(13) cm(-2). The irradiation campaign was aimed at studying the effects of radiation induced displacement damage on the charge collection properties of the device, which was conceived for applications to charged particle tracking in high energy physics experiments. A number of different techniques, including electrical characterization of the front-end electronics and of DNW diodes, laser stimulation of the sensors and tests with Fe-55 and Sr-90 radioactive sources, has been employed for evaluating the device operation before and after irradiation. This paper discusses the measurement results and their relation with the bulk damage mechanisms underlying performance degradation in DNW MAPS.
引用
收藏
页码：900 / 908
页数：9
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