Ti Schottky barrier diodes on n-type 6H-SiC

被引：0
|
作者：
Liu, ZL [1 ]
Wang, SR [1 ]
Yu, F [1 ]
Zhang, YG [1 ]
Zhao, H [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.
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页码：1183 / 1186
页数：4
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