Near-bandgap photoluminescence decay time in GaN epitaxial layers grown on sapphire

被引：0
|
作者：
Hangleiter, A [1 ]
Im, JS [1 ]
Forner, T [1 ]
Harle, V [1 ]
Scholz, F [1 ]
机构：
[1] UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：559 / 564
页数：6
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