Near-bandgap photoluminescence decay time in GaN epitaxial layers grown on sapphire

被引：0
|
作者：
Hangleiter, A [1 ]
Im, JS [1 ]
Forner, T [1 ]
Harle, V [1 ]
Scholz, F [1 ]
机构：
[1] UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：559 / 564
页数：6
相关论文
共 50 条
  • [21] Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging
    Pavlidis, Georges
    Yates, Luke
    Kendig, Dustin
    Lo, Chien-Fong
    Marchand, Hugues
    Barabadi, Banafsheh
    Graham, Samuel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) : 822 - 827
  • [22] DLDS-RELATED NEAR-BANDGAP PHOTOLUMINESCENCE PEAK IN CURRENT DEGRADED GAALAS LEDS
    MADELON, R
    AJROUDI, M
    FORTINI, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (08) : 810 - 814
  • [23] Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition
    Narayanan, V
    Lorenz, K
    Kim, W
    Mahajan, S
    APPLIED PHYSICS LETTERS, 2001, 78 (11) : 1544 - 1546
  • [24] Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
    Tsykaniuk, Bogdan I.
    Nikolenko, Andrii S.
    Strelchuk, Viktor V.
    Naseka, Viktor M.
    Mazur, Yuriy I.
    Ware, Morgan E.
    DeCuir, Eric A., Jr.
    Sadovyi, Bogdan
    Weyher, Jan L.
    Jakiela, Rafal
    Salamo, Gregory J.
    Belyaev, Alexander E.
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [25] Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
    Monteiro, T
    Pereira, E
    Correia, MR
    Xavier, C
    Hofmann, DM
    Meyer, BK
    Fischer, S
    Cremades, A
    Piqueras, J
    JOURNAL OF LUMINESCENCE, 1997, 72-4 : 696 - 700
  • [26] Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
    Bogdan I. Tsykaniuk
    Andrii S. Nikolenko
    Viktor V. Strelchuk
    Viktor M. Naseka
    Yuriy I. Mazur
    Morgan E. Ware
    Eric A. DeCuir
    Bogdan Sadovyi
    Jan L. Weyher
    Rafal Jakiela
    Gregory J. Salamo
    Alexander E. Belyaev
    Nanoscale Research Letters, 2017, 12
  • [27] Epitaxial tilting of GaN grown on vicinal surfaces of sapphire
    Huang, XR
    Bai, J
    Dudley, M
    Dupuis, RD
    Chowdhury, U
    APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3
  • [28] PHOTOLUMINESCENCE OF EPITAXIAL ZNSE LAYERS GROWN ON GE
    CHERNOW, F
    RUSE, GF
    ELDRIDGE, GW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1365 - 1370
  • [29] AlGaN epitaxial layers grown by HVPE on sapphire substrates
    Soukhoveev, V.
    Kovalenkov, O.
    Shapovalova, L.
    Ivantsov, V.
    Usikov, A.
    Dmitriev, V.
    Davydov, V.
    Smirnov, A.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1483 - 1486
  • [30] GaN:Co epitaxial layers grown by MOVPE
    Simek, P.
    Sedmidubsky, D.
    Klimova, K.
    Mikulics, M.
    Marysko, M.
    Vesely, M.
    Jurek, K.
    Sofer, Z.
    JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 62 - 68
12345