Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

被引：7

作者：

Oh, Seung Kyu ^{[1
]}

Song, Chi Gyun ^{[1
]}

Jang, Taehoon ^{[2
]}

Kwak, Joon Seop ^{[1
]}

机构：

[1] Sunchon Natl Univ, Dept Printed Elect Engn, Jeonnam, South Korea

[2] LG Elect, IGBT Team, Seoul, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2013年 / 13卷 / 06期

关键词：

AlGaN/GaN HEMTs on sapphire; gate leakage current; E-beam irradiation; surface state; GAN; OXYGEN; DONOR;

D O I：

10.5573/JSTS.2013.13.6.617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from 4.0x10(-4)A, 6.5x10(-5) A, 2.7x10(-8) A to 7.7x10(-5) A, 7.7x10(-6) A, 4.7x10(-9) A, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the A;GaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

引用

页码：617 / 621

页数：5

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