Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

被引：7
|
作者：
Oh, Seung Kyu [1 ]
Song, Chi Gyun [1 ]
Jang, Taehoon [2 ]
Kwak, Joon Seop [1 ]
机构：
[1] Sunchon Natl Univ, Dept Printed Elect Engn, Jeonnam, South Korea
[2] LG Elect, IGBT Team, Seoul, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2013年 / 13卷 / 06期
关键词：
AlGaN/GaN HEMTs on sapphire; gate leakage current; E-beam irradiation; surface state; GAN; OXYGEN; DONOR;
D O I：
10.5573/JSTS.2013.13.6.617
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from 4.0x10(-4)A, 6.5x10(-5) A, 2.7x10(-8) A to 7.7x10(-5) A, 7.7x10(-6) A, 4.7x10(-9) A, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the A;GaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.
引用
收藏
页码：617 / 621
页数：5
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