The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

被引：85

作者：

Sanabria, C ^{[1
]}

Chakraborty, A ^{[1
]}

Xu, HT ^{[1
]}

Rodwell, MJ ^{[1
]}

Mishra, UK ^{[1
]}

York, RA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 01期

关键词：

AlGaN; GaN; gate leakage; high electron mobility transistor (HEMT); noise figure; van der Ziel;

D O I：

10.1109/LED.2005.860889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than I dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices.

引用

页码：19 / 21

页数：3

共 50 条

[1] Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
Chung, Jinwook W.
Roberts, John C.
Piner, Edwin L.
Palacios, Tomas
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) : 1196 - 1198
[2] Effect of gate leakage current on noise in AlGaN/GaN HFETs
Rumyantsev, SL
Pala, N
Shur, MS
Levinshtein, ME
Gaska, R
Hu, X
Yang, J
Simin, G
Khan, MA
[J]. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 938 - 941
[3] Effect of plasma dry etching on gate leakage of recessed AlGaN/GaN HEMTs
Li, Chengzhan
Pang, Lei
Liu, Xinyu
Huang, Jun
Liu, Jian
Zheng, Yingkui
He, Zhijing
[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (11): : 1777 - 1781
[4] Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs
Turuvekere, Sreenidhi
DasGupta, Amitava
DasGupta, Nandita
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3449 - 3452
[5] On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs
Karmalkar, S
Satyan, N
Sathaiya, DM
[J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (02) : 87 - 89
[6] Modified model of gate leakage currents in AlGaN/GaN HEMTs
Wang, Yuan-Gang
Feng, Zhi-Hong
Lv, Yuan-Jie
Tan, Xin
Dun, Shao-Bo
Fang, Yu-Long
Cai, Shu-Jun
[J]. CHINESE PHYSICS B, 2016, 25 (10)
[7] Modified model of gate leakage currents in AlGaN/GaN HEMTs
王元刚
冯志红
吕元杰
谭鑫
敦少博
房玉龙
蔡树军
[J]. Chinese Physics B, 2016, 25 (10) : 345 - 349
[8] Modeling of the Reverse Gate Leakage Current of AlGaN/GaN HEMTs
Cai, Feiyang
Xia, Guangrui
Li, Simon
Fu, Yue
[J]. PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 697 - 700
[9] Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs
Sanabria, C
Xu, HT
Palacios, T
Chakrahorty, A
Heikman, S
Mishra, UK
York, RA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) : 762 - 769
[10] Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
Turuvekere, Sreenidhi
Karumuri, Naveen
Rahman, A. Azizur
Bhattacharya, Arnab
DasGupta, Amitava
DasGupta, Nandita
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3157 - 3165

← 1 2 3 4 5 →