1.3 μm InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy

被引：1

作者：

Shimizu, H ^{[1
]}

Kumada, K ^{[1
]}

Yamanaka, N ^{[1
]}

Iwai, N ^{[1
]}

Mukaihara, T ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Nishi Ku, Yokohama, Kanagawa 220, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

gas-source molecular-beam epitaxy (GSMBE); modulation doping; InAsP; p-type; differential gain; MQW laser;

D O I：

10.1016/S0022-0248(98)01488-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the effect of p-type modulation doping on the laser performance in 1.3 mu m InAsP compressively strained MQW lasers grown by gas-sourer molecular beam-epitaxy (GSMBE) for the first time. A sharp modulation doping profile of beryllium was confirmed by secondary ion mass spectroscopy. A very low threshold current of 6 mA was: obtained for buried heterostucture lasers doped with 5 x 10(18) cm(-3) of 300 mu m-long cavity with cleaved facets. By using p-type MD-MQW lasers. the gain coefficient was confirmed to increase by about 100 cm(-1) compared to undoped MQW lasers from the measurement of cavity length dependence of threshold current density. Further, differential gain was confirmed to increase by a factor of 1.34 from the relative intensity noise spectrum. (C) 1999 Elsevier Science: B.V. All rights reserved.

引用

页码：896 / 900

页数：5

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[1] 1.3 μm InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy
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