1.3 μm InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy

被引：0

作者：

Shimizu, H. ^{[1
]}

Kumada, K. ^{[1
]}

Yamanaka, N. ^{[1
]}

Iwai, N. ^{[1
]}

Mukaihara, T. ^{[1
]}

Kasukawa, A. ^{[1
]}

机构：

[1] The Furukawa Electric Co., Ltd., Yokohama RD Labs., 2-4-3 O., Yokohama 220, Japan

来源：

Journal of Crystal Growth | 1999年 / 201卷

关键词：

Current density - Heterojunctions - Quantum well lasers - Secondary ion mass spectrometry - Semiconducting indium compounds - Semiconductor doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We investigated the effect of p-type modulation doping on the laser performance in 1.3 μm InAsP compressively strained MQW lasers grown by gas-source molecular beam-epitaxy (GSMBE) for the first time. A sharp modulation doping profile of beryllium was confirmed by secondary ion mass spectroscopy. A very low threshold current of 6 mA was obtained for buried heterostucture lasers doped with 5×1018 cm-3 of 300 μm-long cavity with cleaved facets. By using p-type MD-MQW lasers, the gain coefficient was confirmed to increase by about 100 cm-1 compared to undoped MQW lasers from the measurement of cavity length dependence of threshold current density. Further, differential gain was confirmed to increase by a factor of 1.34 from the relative intensity noise spectrum.

引用

页码：896 / 900

共 50 条

[1] 1.3 μm InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy
Shimizu, H
Kumada, K
Yamanaka, N
Iwai, N
Mukaihara, T
Kasukawa, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 896 - 900
[2] Low threshold 1.3μm InAsP n-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy
Shimizu, H
Kumada, K
Yamanaka, N
Iwai, N
Mukaihara, T
Kasukawa, A
[J]. ELECTRONICS LETTERS, 1998, 34 (09) : 888 - 890
[3] 1.3-μm InAsP n-type modulation-doped MQW lasers grown by gas-source molecular beam epitaxy
Shimizu, H
Kumada, K
Yamanaka, N
Iwai, N
Mukaihara, T
Kasukawa, A
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) : 449 - 456
[4] Low threshold 1.3μm InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy
Shimizu, H
Kumada, K
Yamanaka, N
Iwai, N
Mukaihara, T
Nishikata, K
Kasukawa, A
[J]. 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 717 - 720
[5] Submilliampere threshold current in 1.3μm InAsP n-type modulation doped MQW lasers grown by gas source molecular beam epitaxy
Shimizu, H
Kumada, K
Yamanaka, N
Iwai, N
Mukaihara, T
Kasukawa, A
[J]. ELECTRONICS LETTERS, 1998, 34 (16) : 1591 - 1593
[6] Low threshold current 1.3 mu m InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy
Thiagarajan, P
Giudice, GE
Temkin, H
Robinson, GY
[J]. ELECTRONICS LETTERS, 1996, 32 (12) : 1103 - 1105
[7] INSITU CONTROL OF AS COMPOSITION IN INASP AND INGAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
HOU, HQ
TU, CW
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1872 - 1874
[8] HEAVILY CARBON-DOPED P-TYPE (IN)GAAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING DIIODOMETHANE
TOMIOKA, T
OKAMOTO, N
ANDO, H
YAMAURA, S
FUJII, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 221 - 226
[9] Highly strained 1.3 mu m InAsP/InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy
Thiagarajan, P
Giudice, GE
Temkin, H
Robinson, GY
[J]. 15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, : 73 - 74
[10] SI/SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
MATSUMURA, A
PRASAD, RS
THORNTON, TJ
FERNANDEZ, JM
XIE, MH
ZHANG, X
ZHANG, J
JOYCE, BA
[J]. COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 319 - 322

← 1 2 3 4 5 →