Electrical properties of dielectric foil for embedded PCB capacitors

被引:8
|
作者
Piasecki, T. [1 ]
Nitsch, K. [1 ]
Dziedzic, A. [1 ]
Chabowski, K. [1 ]
Steplewski, W. [2 ]
Koziol, G. [2 ]
机构
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
[2] Tele & Radio Res Inst, PL-03450 Warsaw, Poland
来源
MATERIALS SCIENCE-POLAND | 2012年 / 30卷 / 04期
关键词
impedance spectroscopy; equivalent circuit; dielectric foil; embedded elements; PCB;
D O I
10.2478/s13536-012-0057-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
One of the methods of achieving high packaging density of passive elements on the PCB is using the capacitors embedded in multilayer PCB. Test structures consisting of embedded capacitors were fabricated using the FaradFlexA (R) capacitive internal layers. Impedance spectroscopy and equivalent circuit modelling was used to determine their electrical properties such as the capacitance, parasitic resistance and inductance. The use of several stages of accelerated ageing allowed us to test the durability of the structures. The results showed good quality stability of the embedded elements. The spatial distribution of the capacitance of the test structures on the surface of the PCB form was tested. The influence of the process parameters during lamination on the values of embedded capacitors was revealed.
引用
收藏
页码:335 / 341
页数:7
相关论文
共 50 条
  • [41] Temperature and voltage aging effects on electrical conduction mechanism in epoxy-BaTiO3 composite dielectric used in embedded capacitors
    Alam, Mohammed A.
    Azarian, Michael H.
    Osterman, Michael
    Pecht, Michael
    MICROELECTRONICS RELIABILITY, 2011, 51 (05) : 946 - 952
  • [42] Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD
    Khosa, R. Y.
    Chen, J. T.
    Palsson, K.
    Karhu, R.
    Hassan, J.
    Rorsman, N.
    Sveinbjornsson, E. O.
    SOLID-STATE ELECTRONICS, 2019, 153 : 52 - 58
  • [43] Impacts of Ti Content and Annealing Temperature on Electrical Properties of Si MOS Capacitors with HfTiON Gate Dielectric
    Ji, F.
    Xu, J. P.
    Li, C. X.
    Lai, P. T.
    Chan, C. L.
    2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, : 221 - +
  • [44] Structural and electrical properties of TZO MOS capacitors
    Mohammad Hayath Rajvee
    S. V. Jagadeesh Chandra
    B. Eswara Rao
    Y. S. V. Raman
    P. Rajesh Kumar
    Applied Physics A, 2022, 128
  • [45] Structural and electrical properties of TZO MOS capacitors
    Rajvee, Mohammad Hayath
    Chandra, S. V. Jagadeesh
    Rao, B. Eswara
    Raman, Y. S. V.
    Kumar, P. Rajesh
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2022, 128 (12):
  • [46] Micro-structural and Interfacial Effects on the Dielectric Properties of High-k Aluminum/Epoxy Composites for Embedded Capacitors
    Chen, Chong
    Yu, Shuhui
    Sun, Rong
    Luo, Suibin
    Weng, Lvqian
    Du, Ruxu
    2009 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2009), 2009, : 513 - +
  • [47] High dielectric constant SU8 composite photoresist for embedded capacitors
    Xu, Jianwen
    Wong, C. P.
    JOURNAL OF APPLIED POLYMER SCIENCE, 2007, 103 (03) : 1523 - 1528
  • [48] Study on Electrical Properties of HfTiON and HfTiO Gate Dielectric Ge MOS Capacitors with Wet-NO Surface Pretreatment
    Zou, Xiao
    Xu, Jing-Ping
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 1272 - +
  • [49] Development of Film-on-Foil Ceramic Dielectrics for Embedded Capacitors for Power Inverters in Electric Drive Vehicles
    Balachandran, Uthamalingam
    Narayanan, Manoj
    Liu, Shanshan
    Ma, Beihai
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)
  • [50] Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors
    Demirezen, S.
    Kaya, A.
    Yeriskin, S. A.
    Balbasi, M.
    Uslu, I.
    Results in Physics, 2016, 6 : 180 - 185