Electronic properties of a URhGe single crystal

被引：41
|
作者：
Prokes, K
Tahara, T
Echizen, Y
Takabatake, T
Fujita, T
Hagmusa, IH
Klaasse, JCP
Brück, E
de Boer, FR
Divis, M
Sechovsky, V
机构：
[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[2] Hiroshima Univ, ADSM, Dept Quantum Matter, Higashihiroshima 7398526, Japan
[3] Univ Amsterdam, Van Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands
[4] Charles Univ, Dept Elect Struct, Prague 12116 2, Czech Republic
来源：
PHYSICA B-CONDENSED MATTER | 2002年 / 311卷 / 3-4期
基金：
日本学术振兴会;
关键词：
actinides; URhGe; electronic properties; electrical resistivity; magnetic susceptibility; specific heat; neutron diffraction; magnetic structure;
D O I：
10.1016/S0921-4526(01)01037-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Structural studies by means of powder X-ray diffraction and single-crystal neutron diffraction show that URhGe crystallizes in the orthorhombic TiNiSi-type of structure. Combined magnetic. electrical-transport and thermal studies performed for the first time on a single crystal confirm ferromagnetic order of URhGe below 9.6K. In contrast to previous powder neutron-diffraction experiments. our single-crystal results point to collinear ferromagnetic order of U moments of 0.35+/-0.08 mu(B) confined to the b-c plane. i.e. with no component along the a-axis, which is the hard-magnetization direction in URhGe. Our findings regarding the magnetic properties are in good agreement with theoretical first-principle calculations. (C) 2002 Elsevier Science B.V, All rights reserved.
引用
收藏
页码：220 / 232
页数：13
相关论文
共 50 条
  • [21] Electronic properties of graphene-single crystal diamond heterostructures
    Zhao, Fang
    Thuong Thoung Nguyen
    Golsharifi, Mohammad
    Amakubo, Suguru
    Loh, K. P.
    Jackman, Richard B.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (05)
  • [22] Electronic structure of the pentacene single crystal:: Relation to transport properties
    Cornil, J
    Calbert, JP
    Brédas, JL
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (06) : 1250 - 1251
  • [23] Magnetic, magnetoelastic and other electronic properties of a UIrAl single crystal
    Andreev, A. V.
    Mushnikov, N. V.
    Honda, F.
    Sechovsky, V.
    Javorsky, P.
    Goto, T.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : E337 - E339
  • [24] High-field superconductivity at an electronic topological transition in URhGe
    E. A. Yelland
    J. M. Barraclough
    W. Wang
    K. V. Kamenev
    A. D. Huxley
    Nature Physics, 2011, 7 : 890 - 894
  • [25] A comparative study for structural and electronic properties of single-crystal ScN
    Mohammad, R.
    Katircioglu, S.
    CONDENSED MATTER PHYSICS, 2011, 14 (02)
  • [26] Room temperature flash of single crystal titania: Electronic and optical properties
    Yadav, Devinder
    Yuan, Yakun
    Gopalan, Venkatraman
    Raj, Rishi
    Jo, Seohyeon
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2023, 106 (01) : 46 - 52
  • [27] Electronic properties of single-crystal diamonds heavily doped with boron
    S. G. Buga
    V. D. Blank
    S. A. Terent’ev
    M. S. Kuznetsov
    S. A. Nosukhin
    V. A. Kulbachinskii
    A. V. Krechetov
    V. G. Kytin
    G. A. Kytin
    Journal of Experimental and Theoretical Physics, 2007, 104 : 586 - 589
  • [28] ELECTRONIC AND INFRARED PROPERTIES OF THE ALPHA-SEXITHIENYL SINGLE-CRYSTAL
    LAZZARONI, R
    PAL, AJ
    ROSSINI, S
    RUANI, G
    ZAMBONI, R
    TALIANI, C
    SYNTHETIC METALS, 1991, 42 (03) : 2359 - 2362
  • [29] Electronic transport properties of single-crystal bismuth nanowire arrays
    Zhang, ZB
    Sun, XZ
    Dresselhaus, MS
    Ying, JY
    Heremans, J
    PHYSICAL REVIEW B, 2000, 61 (07): : 4850 - 4861
  • [30] Electronic properties of single-crystal diamonds heavily doped with boron
    Buga, S. G.
    Blank, V. D.
    Terent'ev, S. A.
    Kuznetsov, M. S.
    Nosukhin, S. A.
    Kulbachinskii, V. A.
    Krechetov, A. V.
    Kytin, V. G.
    Kytin, G. A.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2007, 104 (04) : 586 - 589
12345