Electronic properties of graphene-single crystal diamond heterostructures

被引:11
|
作者
Zhao, Fang [1 ,2 ]
Thuong Thoung Nguyen [1 ,2 ]
Golsharifi, Mohammad [1 ,2 ]
Amakubo, Suguru [1 ,2 ]
Loh, K. P. [3 ]
Jackman, Richard B. [1 ,2 ]
机构
[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
[2] UCL, Dept Elect & Elect Engn, London WC1H 0AH, England
[3] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
基金
英国工程与自然科学研究理事会;
关键词
RAMAN-SPECTROSCOPY; CVD GROWTH; CARBON; TRANSPORT; ORIGIN; COPPER; FILMS; XPS;
D O I
10.1063/1.4816092
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible to chemically functionalise the diamond surface, and in the present case H-, F-, O-, and N-group have been purposefully added prior to graphene deposition. The electronic properties of the resultant heterostructures vary strongly; a p-type layer with good mobility and a band gap of similar to 0.7 eV is created when H-terminated diamond layers are used, whilst a layer with more metallic-like character (high carrier density and low carrier mobility) arises when N(O)-terminations are introduced. Since it is relatively easy to pattern these functional groups on the diamond surface, this suggests that this approach may offer an exciting route to 2D device structures on single layer graphene sheets. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:6
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