Electronic properties of graphene-single crystal diamond heterostructures

被引:11
|
作者
Zhao, Fang [1 ,2 ]
Thuong Thoung Nguyen [1 ,2 ]
Golsharifi, Mohammad [1 ,2 ]
Amakubo, Suguru [1 ,2 ]
Loh, K. P. [3 ]
Jackman, Richard B. [1 ,2 ]
机构
[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
[2] UCL, Dept Elect & Elect Engn, London WC1H 0AH, England
[3] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
基金
英国工程与自然科学研究理事会;
关键词
RAMAN-SPECTROSCOPY; CVD GROWTH; CARBON; TRANSPORT; ORIGIN; COPPER; FILMS; XPS;
D O I
10.1063/1.4816092
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible to chemically functionalise the diamond surface, and in the present case H-, F-, O-, and N-group have been purposefully added prior to graphene deposition. The electronic properties of the resultant heterostructures vary strongly; a p-type layer with good mobility and a band gap of similar to 0.7 eV is created when H-terminated diamond layers are used, whilst a layer with more metallic-like character (high carrier density and low carrier mobility) arises when N(O)-terminations are introduced. Since it is relatively easy to pattern these functional groups on the diamond surface, this suggests that this approach may offer an exciting route to 2D device structures on single layer graphene sheets. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Structural and Electronic Properties of Interfaces in Graphene and Hexagonal Boron Nitride Lateral Heterostructures
    Zhang, Junfeng
    Xie, Weiyu
    Xu, Xiaohong
    Zhang, Shengbai
    Zhao, Jijun
    CHEMISTRY OF MATERIALS, 2016, 28 (14) : 5022 - 5028
  • [42] Effects of structural imperfection on the electronic properties of graphene/WSe2 heterostructures
    Sun, Minglei
    Chou, Jyh-Pin
    Yu, Jin
    Tang, Wencheng
    JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (39) : 10383 - 10390
  • [43] Electronic properties study of CePtIn single crystal
    Klicpera, M.
    Javorsky, P.
    MATERIALS RESEARCH EXPRESS, 2014, 1 (01):
  • [44] Electronic properties and structure of single crystal perylene
    Pookpanratana, S. J.
    Goetz, K. P.
    Bittle, E. G.
    Haneef, H.
    You, L.
    Hacker, C. A.
    Robey, S. W.
    Jurchescu, O. D.
    Ovsyannikov, R.
    Giangrisostomi, E.
    ORGANIC ELECTRONICS, 2018, 61 : 157 - 163
  • [45] Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
    Deng, Zhongxun
    Wang, Xianhui
    Cui, Jie
    RSC ADVANCES, 2019, 9 (24) : 13418 - 13423
  • [46] Stacking sequence dependence of electronic properties in double-layer graphene heterostructures
    Ni, Mei-Yan
    Wakabayashi, Katsunori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)
  • [47] Tuning electronic properties of graphene heterostructures by amorphous-to-crystalline phase transitions
    Kulju, S.
    Akola, J.
    Prendergast, D.
    Jones, R. O.
    PHYSICAL REVIEW B, 2016, 93 (19)
  • [48] ELECTRONIC STRUCTURE OF THE DIAMOND CRYSTAL
    HERMAN, F
    PHYSICAL REVIEW, 1952, 88 (05): : 1210 - 1211
  • [49] Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures
    Sun, Minglei
    Chou, Jyh-Pin
    Yu, Jin
    Tang, Wencheng
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (26) : 17324 - 17330
  • [50] Electronic transport in graphene-based heterostructures
    Tan, J. Y.
    Avsar, A.
    Balakrishnan, J.
    Koon, G. K. W.
    Taychatanapat, T.
    O'Farrell, E. C. T.
    Watanabe, K.
    Taniguchi, T.
    Eda, G.
    Neto, A. H. Castro
    Oezyilmaz, B.
    APPLIED PHYSICS LETTERS, 2014, 104 (18)