Analysis of structural distortion in Eshelby twisted InP nanowires by scanning precession electron diffraction

被引:3
|
作者
Ugarte, Daniel [1 ,2 ]
Tizei, Luiz H. G. [3 ]
Cotta, Monica A. [1 ]
Ducati, Caterina [2 ]
Midgley, Paul A. [2 ]
Eggeman, Alexander S. [2 ,4 ]
机构
[1] Univ Estadual Campinas UNICAMP, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP, Brazil
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England
[3] Univ Paris Sud, Lab Phys Solides, CNRS UMR8502, F-91405 Orsay, France
[4] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England
基金
巴西圣保罗研究基金会; 英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
electron microscopy; scanning precession electron diffraction; Eshelby twist; screw dislocation; nanowire; indium phosphide; SEMICONDUCTOR SPECIMENS; RESOLUTION; STRAIN; DRIVEN; GROWTH; TOMOGRAPHY; PRECISION; MECHANISM; ALIGNMENT;
D O I
10.1007/s12274-019-2328-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Transmission electron microscopes (TEM) are widely used in nanotechnology research. However, it is still challenging to characterize nanoscale objects; their small size coupled with dynamical diffraction makes interpreting real- or reciprocal-space data difficult. Scanning precession electron diffraction ((S)PED) represents an invaluable contribution, reducing the dynamical contributions to the diffraction pattern at high spatial resolution. Here a detailed analysis of wurtzite InP nanowires (30-40 nm in diameter) containing a screw dislocation and an associated wire lattice torsion is presented. It has been possible to characterize the dislocation with great detail (Burgers and line vector, handedness). Through careful measurement of the strain field and comparison with dynamical electron diffraction simulations, this was found to be compatible with a Burgers vector modulus equal to one hexagonal lattice cell parameter despite the observed crystal rotation rate being larger (ca. 20%) than that predicted by classical elastic theory for the nominal wire diameter. These findings corroborate the importance of the (S)PED technique for characterizing nanoscale materials.
引用
收藏
页码:939 / 946
页数:8
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