A Ka Band 15W Power Amplifier MMIC Based on GaN HEMT Technology

被引：24
|
作者：
Yu, Xuming [1 ]
Tao, Hongqi [1 ]
Hong, Wei [1 ]
机构：
[1] Southeast Univ, State Key Lab Millimeter Wave, Nanjing, Peoples R China
来源：
2016 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IWEM) | 2016年
关键词：
D O I：
10.1109/iWEM.2016.7505042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the merits of GaN MMIC technology for millimeter-wave power applications are demonstrated. A 15 W Ka-band MMIC power amplifier using 0.15 um gate GaN HEMT technology is presented. The three-stage amplifier MMIC was designed in micro-strip technology, and the substrate is SiC for better performance. Saturated output power of 42.5dBm and peak power-added-efficiency of 30.5% were measured at 35.4GHz with the pulsed DC supply voltage of 24 V. Across the 34-36 GHz range, the amplifier delivers output power above 41.9 dBm with power-added-efficiency over 27%. The chip size is 9.52mm2(2.8 mm x 3.4 mm).
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页数：3
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