A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications

被引：27

作者：

Quaglia, Roberto ^{[1
]}

Camarchia, Vittorio ^{[2
]}

Moreno Rubio, Jorge Julian ^{[3
]}

Pirola, Marco ^{[2
]}

Ghione, Giovanni ^{[2
]}

机构：

[1] Cardiff Univ, Ctr High Frequency Engn, Cardiff CF24 3AA, S Glam, Wales

[2] Politecn Torino, Dept Elect, I-10129 Turin, Italy

[3] Univ Pedagog & Tecnol Colombia, Dept Elect, Sogamoso 150003, Colombia

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 04期

基金：

欧盟地平线“2020”;

关键词：

Doherty; gallium nitride; microwave monolithic integrated circuit (MMIC);

D O I：

10.1109/LMWC.2017.2678440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents an integrated Doherty power amplifier (PA) in 0.25-mu m GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an output power of 36 +/- 0.5 dBm between 13.7 and 15.3 GHz, while at 14.6 GHz, it shows a 6-dB output back-off efficiency higher than 28%. Modulated signal measurements applying digital predistortion demonstrate the compatibility of the amplifier with point-to-point radio requirements. To the best of our knowledge, this PA has the highest back-off efficiency for the 15-GHz band, and is the first GaN Doherty in the Ku-band.

引用

页码：365 / 367

页数：3

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