Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length

被引：49
|
作者：
Wu, YR [1 ]
Singh, M
Singh, J
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] MIT, Elect Res Lab, Cambridge, MA 02139 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 04期
关键词：
AlGaN; effective gate length; GaN; heterojunction field-effect transistors (HFETs); InGaAs; InP; recessed gate; scaling; III-V nitrides;
D O I：
10.1109/TED.2006.870571
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper addresses scaling issues in AlGaN/GaN heterojunction field-effect transistors (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 mu m, f(T) values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices shrink. The results for AlGaN/GaN are compared with In0.52Al0.48-In0.53Ga0.47As-InP devices, and the authors found that the limiting role of velocity overshoot and depletion region spread causes the GaN HFETs to have a peak fT of similar to 220 GHz compared to similar to 500 GHz for InGaAs devices.
引用
收藏
页码：588 / 593
页数：6
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