A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

被引：131

作者：

Huang, Chien-Yuan ^{[1
]}

Shen, Wen Chao ^{[1
]}

Tseng, Yuan-Heng ^{[1
]}

King, Ya-Chin ^{[1
]}

Lin, Chrong-Jung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 08期

关键词：

Contact-resistive random access memory (CRRAM); random-number generator; random telegraph noise (RTN);

D O I：

10.1109/LED.2012.2199734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of true random number generator, based on the random telegraph noise of a contact-resistive random access memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal-oxide-semiconductor logic process, the occupied area can be as low as 45 mu m(2), demonstrating substantial saving in the circuit area.

引用

页码：1108 / 1110

页数：3

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