Investigation of InGaP/InGaAs Pseudomorphic Triple Doped-Channel Field-Effect Transistors

被引：0
|
作者：
Tsai, Jung-Hui [1 ]
Jhou, Jia-Cing [1 ]
Ou-Yang, Jhih-Jhong [1 ]
机构：
[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan
来源：
2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年
关键词：
InGaP/InGaAs; pseudomorphic; field-effect transistor; transconductance; gate voltage swing;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The comparison of DC performance on InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.
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页数：2
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