High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

被引：38
|
作者：
Laih, LW [1 ]
Cheng, SY [1 ]
Wang, WC [1 ]
Lin, PH [1 ]
Chen, JY [1 ]
Liu, WC [1 ]
Lin, W [1 ]
机构：
[1] DGT,TELECOMMUN LABS,APPL RES LAB,YANGMEI 326,TAIWAN
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 01期
关键词：
field effect transistors; semiconductor devices;
D O I：
10.1049/el:19970030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new i-In0.49Ga0.51P n-In1Ga1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1 x 80 mu m(2) gate dimension, a maximum drain saturation current of 830mA/mm, a maximum transconductance of 188mS mm, a high gate breakdown voltage of 34V, and a large gate voltage swing of 3.3V with transconductance > 150mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications.
引用
收藏
页码：98 / 99
页数：2
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