Properties of ZnO/MgO Multilayer Films as Insulating Layer Prepared by Sol-Gel Method

被引：0
|
作者：
Habibah, Z. [1 ]
Arshad, A. N. [2 ]
Wahid, M. H. [2 ]
Ismail, L. N. [1 ]
Bakar, R. A. [1 ]
Mamat, M. H. [1 ]
Rusop, M. [1 ,3 ]
机构：
[1] Univ Teknol MARA, Fac Elect Engn, NANO ElecT Ctr NET, Shah Alam 40450, Selangor, Malaysia
[2] Univ Teknol MARA, Fac Sci Appl, Shah Alam 40450, Selangor, Malaysia
[3] Univ Teknol MARA, Inst Sci, NANO SciTech Ctr NST, Shah Alam 40450, Selangor, Malaysia
来源：
2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) | 2012年
关键词：
ZnO/MgO; insulating layer; dielectric; leakage current; sol-gel; OPTICAL-PROPERTIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work present the synthesis of ZnO/MgO multilayer films using spin coating technique with different MgO layer thickness which are 171nm, 238nm and 506nm. The influence of MgO thickness on the insulating layer properties was investigated. The best prepared insulating layer to be used as dielectrics was found to be ZnO/MgO film deposited using 238 nm MgO layer. This is due to it uniformity, low porosity, high resistivity (28.7 x 10(5) Omega. cm) and low leakage current (below 1E-7). The particle produced also in nanometer dimension which in the range of 42 to 84 nm that will lead to the improvement in the device characteristic.
引用
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页码：73 / 77
页数：5
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