Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

被引：5

作者：

Lee, Myoung-Sun ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Cho, Il Hwan ^{[3
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[3] Myongji Univ, Dept Elect Engn, Yongin 449728, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 11期

关键词：

Circular; effective radius; elliptical; gate-all-around (GAA); nanowire; SONOS;

D O I：

10.1109/LED.2012.2215303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characteristics of cylindrical gate-all-around (GAA) SONOS nanowires with elliptical cross sections have been investigated. The mechanism of the program efficiency degradation for the elliptical GAA SONOS is analyzed by 3-D TCAD simulation depending on the geometry aspect ratios (ARs). Moreover, we proposed an effective circular radius (R-eff1) for the elliptical silicon body through a conformal mapping. The I-D-V-GS curves of the elliptical and circular GAA SONOS devices with R-eff1 in initial state are almost consistent with each other for AR <= 2. However, their program properties differ in less than similar to 4.2% due to the localized charge-trapping effect in nitride layer of the elliptical geometry.

引用

页码：1613 / 1615

页数：3

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