Modeling and characterization of high frequency high power GaN/SiC HBT's operating at high temperature

被引：0
|
作者：
Fardi, HZ [1 ]
Pankove, JI [1 ]
机构：
[1] UNIV COLORADO,DEPT ELECT ENGN,DENVER,CO 80217
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV | 1996年 / 2693卷
关键词：
GaN/SiC HBT's; device modeling; numerical analysis; high temperature transistors; high power transistors;
D O I：
10.1117/12.238942
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：73 / 83
页数：11
相关论文
共 50 条
  • [1] Numerical modelling and characterization of high-frequency high-power high-temperature GaN/SiC heterostructure bipolar transistors
    Fardi, HZ
    Alaghband, G
    Pankove, JI
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1997, 82 (06) : 567 - 574
  • [2] Characterization of HBT's for high frequency operation
    Prasad, S
    [J]. PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 892 - 899
  • [3] High temperature performance of hybrid GaN/SiC high power diodes
    Trivedi, M
    Shenai, K
    [J]. 1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE, 1998, : 117 - 122
  • [4] HBT's high frequency noise modeling and analysis
    Wang, Yanfeng
    Wu, Dexin
    [J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (11): : 1140 - 1145
  • [5] Investigation of a sic module with a high operating temperature for power applications
    Tokuda, H.
    Tanaka, Y.
    Nakagawa, H.
    Aoyagi, M.
    Fukuda, K.
    Ohashi, H.
    Tsuno, T.
    Hoshino, T.
    Namikawa, Y.
    Hayashi, H.
    [J]. 2007 9TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1 AND 2, 2007, : 931 - 936
  • [6] Electron transport characteristics in wurtzite phase GaN and SiC for high-power and high-temperature device modeling
    Arabshahi, H
    [J]. EDMO2003: 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2003, : 279 - 289
  • [7] SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES
    JANZEN, E
    KORDINA, O
    HENRY, A
    CHEN, WM
    SON, NT
    MONEMAR, B
    SORMAN, E
    BERGMAN, P
    HARRIS, CI
    YAKIMOVA, R
    TUOMINEN, M
    KONSTANTINOV, AO
    HALLIN, C
    HEMMINGSON, C
    [J]. PHYSICA SCRIPTA, 1994, 54 : 283 - 290
  • [8] Modeling and High Temperature Characterization of SiC-JFET
    Mousa, R.
    Planson, D.
    Morel, H.
    Allard, B.
    Raynaud, C.
    [J]. 2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, 2008, : 3111 - 3117
  • [9] Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications
    Garcia-Luque, A.
    Martin-Guerrero, T. M.
    Pradhan, M.
    Moser, M.
    Alomari, M.
    Burghartz, J. N.
    Schoch, B.
    Sharma, K.
    Kallfass, I
    [J]. 2022 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC), 2022,
  • [10] Characterization and modeling of 650V GaN diodes for high frequency power conversion
    Doublet, Martin
    Defrance, Nicolas
    Pace, Loris
    Okada, Etienne
    Duquesne, Thierry
    Collard, Emmanuel
    Yvon, Arnaud
    Idir, Nadir
    De-Jaeger, Jean-Claude
    [J]. 2021 IEEE DESIGN METHODOLOGIES CONFERENCE (DMC), 2021,
12345