Characterization of HBT's for high frequency operation

被引：0
|
作者：
Prasad, S [1 ]
机构：
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper presents the results of recent research performed by the author and her colleagues. The normal (emitter-up) HBT in AlGaAs/GaAs system and the inverted (collector-up) HBT in the InGaAs/InAlAs/InP system were under investigation. Physical modeling, based on the semiconductor transport equations, was performed; following this, equivalent circuit extraction was carried out and small and large signal models were obtained.
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页码：892 / 899
页数：8
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