Ga2O3 Nanowire Photodetector Prepared on SiO2/Si Template

被引：39

作者：

Wu, Y. L. ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
]}

Weng, W. Y. ^{[1
,2
]}

Liu, C. H. ^{[3
]}

Tsai, T. Y. ^{[1
,2
]}

Hsu, C. L. ^{[4
]}

Chen, K. C. ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 73746, Taiwan

[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

来源：

IEEE SENSORS JOURNAL | 2013年 / 13卷 / 06期

关键词：

beta-Ga2O3; nanowire; UV photodetectors;

D O I：

10.1109/JSEN.2013.2247996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the growth of beta-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. beta-Ga2O3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 degrees C is 3.43 x 10(-3) A/W.

引用

页码：2368 / 2373

页数：6

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