A Fully-Integrated Terahertz Near-Field Sensor for Super-Resolution Imaging in SiGe BiCMOS

被引：0
|
作者：
Hillger, Philipp [1 ]
Grzyb, Janusz [1 ]
Pfeiffer, Ullrich [1 ]
机构：
[1] Univ Wuppertal, IHCT, Wuppertal, Germany
来源：
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年
关键词：
RESOLUTION; POWER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a 0.55 THz near-field sensor implemented in 0.13 mu m SiGe HBT technology from IHP Microelectronics. The sensor utilizes a differential split-ring resonator for evanescent field sensing and on-chip illumination and detection circuitry to enable future large scale sensor array implementations. It provides a dielectric permitivity dependent image contrast and a lateral resolution of 8 mu m (lambda/71). The presented work indicates that super-resolution imaging based on THz nearfield sensors that are fully integrated in silicon technology may represent an alternative to the presently available systems based on scanning near-field optical microscopy (SNOM).
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