A Fully-Integrated Terahertz Near-Field Sensor for Super-Resolution Imaging in SiGe BiCMOS

被引：0

作者：

Hillger, Philipp ^{[1
]}

Grzyb, Janusz ^{[1
]}

Pfeiffer, Ullrich ^{[1
]}

机构：

[1] Univ Wuppertal, IHCT, Wuppertal, Germany

来源：

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年

关键词：

RESOLUTION; POWER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a 0.55 THz near-field sensor implemented in 0.13 mu m SiGe HBT technology from IHP Microelectronics. The sensor utilizes a differential split-ring resonator for evanescent field sensing and on-chip illumination and detection circuitry to enable future large scale sensor array implementations. It provides a dielectric permitivity dependent image contrast and a lateral resolution of 8 mu m (lambda/71). The presented work indicates that super-resolution imaging based on THz nearfield sensors that are fully integrated in silicon technology may represent an alternative to the presently available systems based on scanning near-field optical microscopy (SNOM).

引用

页数：2

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