Spin Hall angle in single-layer graphene

被引：4
|
作者：
da Silva, Juliana M. [1 ]
Santana, Fernando A. F. [1 ]
Ramos, Jorge G. G. S. [2 ]
Barbosa, Anderson L. R. [1 ]
机构：
[1] Univ Fed Rural Pernambuco, Dept Fis, BR-52171900 Recife, PE, Brazil
[2] Univ Fed Paraiba, Dept Fis, BR-58297000 Joao Pessoa, Paraiba, Brazil
来源：
JOURNAL OF APPLIED PHYSICS | 2022年 / 132卷 / 18期
关键词：
TRANSPORT; CHARGE;
D O I：
10.1063/5.0107212
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a Landauer-Buttiker setup for quantum transport. We show that the spin Hall angle of graphene devices exhibits mesoscopic fluctuations that are similar to metal devices. Furthermore, the product between the maximum spin Hall angle deviation and dimensionless longitudinal conductivity follows a universal relationship theta(sH) x sigma = 0.18. Finally, we compare the universal relation with recent experimental data and numerically exact real-space simulations from the tight-binding model.
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收藏
页数：9
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