Search for midgap levels in 3C-SiC grown on Si substrates

被引：11
|
作者：
Yamada, N [1 ]
Kato, M
Ichimura, M
Arai, E
Tokuda, Y
机构：
[1] Toyota Cent Res & Dev Labs Inc, Elect Device Div, Power Device & High Frequency Device Lab, Nagakute, Aichi 4801192, Japan
[2] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Ctr Cooperat Res, Showa Ku, Nagoya, Aichi 4668555, Japan
[4] Aichi Inst Technol, Dept Elect, Toyota 4700392, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 10A期
关键词：
3C-SiC/Si; DLTS; isothermal constant-voltage-capacitance transient spectroscopy (CVCTS); midgap level; Schottky diode;
D O I：
10.1143/JJAP.38.L1094
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To observe defect levels near the midgap in 3C-SiC on Si (001) substrates, deep-level-transient spectroscopy (DLTS) measurement was carried out in the temperature range of 100 K to about 500 K. A DLTS peak appeared near 150 K for all samples. The spectra of some samples showed a broad signal near room temperature. Above 450 K, no peak appeared in the spectra of any sample. This indicates that electron traps with concentration > 10(13) cm(-3) do not exist near the midgap. Isothermal constant-voltage-capacitance transient spectroscopy (CVCTS) was also carried out at temperatures above 400 K, and its results supported this conclusion.
引用
收藏
页码：L1094 / L1095
页数：2
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