Search for midgap levels in 3C-SiC grown on Si substrates

被引：11

作者：

Yamada, N ^{[1
]}

Kato, M

Ichimura, M

Arai, E

Tokuda, Y

机构：

[1] Toyota Cent Res & Dev Labs Inc, Elect Device Div, Power Device & High Frequency Device Lab, Nagakute, Aichi 4801192, Japan

[2] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

[3] Nagoya Inst Technol, Ctr Cooperat Res, Showa Ku, Nagoya, Aichi 4668555, Japan

[4] Aichi Inst Technol, Dept Elect, Toyota 4700392, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 10A期

关键词：

3C-SiC/Si; DLTS; isothermal constant-voltage-capacitance transient spectroscopy (CVCTS); midgap level; Schottky diode;

D O I：

10.1143/JJAP.38.L1094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To observe defect levels near the midgap in 3C-SiC on Si (001) substrates, deep-level-transient spectroscopy (DLTS) measurement was carried out in the temperature range of 100 K to about 500 K. A DLTS peak appeared near 150 K for all samples. The spectra of some samples showed a broad signal near room temperature. Above 450 K, no peak appeared in the spectra of any sample. This indicates that electron traps with concentration > 10(13) cm(-3) do not exist near the midgap. Isothermal constant-voltage-capacitance transient spectroscopy (CVCTS) was also carried out at temperatures above 400 K, and its results supported this conclusion.

引用

页码：L1094 / L1095

页数：2

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