A CAD-compatible SOI/CMOS gate array having body-fixed partially-depleted transistors

被引:1
|
作者
Ueda, K
Nii, K
Wada, Y
Takimoto, I
Maeda, S
Iwamatsu, T
Yamaguchi, Y
Maegawa, S
Mashiko, K
Hamano, H
机构
关键词
D O I
10.1109/ISSCC.1997.585386
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:288 / 289
页数:2
相关论文
共 9 条
  • [1] A CAD-compatible SOI-CMOS gate array using 0.35 μm partially-depleted transistors
    Ueda, K
    Nii, K
    Wada, Y
    Maeda, S
    Iwamatsu, T
    Yamaguchi, Y
    Ipposhi, T
    Maegawa, S
    Mashiko, K
    Horiba, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (02) : 205 - 211
  • [2] Floating body effects in partially-depleted SOI CMOS circuits
    Lu, PF
    Ji, J
    Chuang, CT
    Wagner, LF
    Hsieh, CM
    Kuang, JB
    Hsu, L
    Pelella, MM
    Chu, S
    Anderson, CJ
    1996 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN - DIGEST OF TECHNICAL PAPERS, 1996, : 139 - 144
  • [3] Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide
    Jun, B
    Fouillat, M
    Schrimpf, RD
    Fleetwood, DM
    Cristoloveanu, S
    2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2004, : 30 - 31
  • [4] X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGeHBTs fabricated on CMOs-compatible SOI
    Bellini, Marco
    Jun, Bongim
    Chen, Tianbing
    Cressler, John D.
    Marshall, Paul W.
    Chen, Dakai
    Schrimpf, Ronald D.
    Fleetwood, Daniel M.
    Cai, Jin
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3182 - 3186
  • [5] CAD-COMPATIBLE HIGH-SPEED CMOS/SIMOX GATE ARRAY USING FIELD-SHIELD ISOLATION
    IWAMATSU, T
    YAMAGUCHI, Y
    INOUE, Y
    NISHIMURA, T
    TSUBOUCHI, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (11) : 1934 - 1939
  • [6] Influence of body contact on the ESD protection performance in 0.35μm Partially-Depleted SOI Salicided CMOS Technology
    Wang, Zhongfang
    Xie, Chengmin
    Yue, Hongju
    Wu, Longsheng
    Liu, Youbao
    MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8, 2012, 383-390 : 7025 - 7031
  • [7] Efficient Characterization Methodology of Gate-Bulk Leakage and Capacitance for Ultra-Thin Oxide Partially-Depleted (PD) SOI Floating Body CMOS
    Chen, David
    Lee, Ryan
    Liu, Y. C.
    Lin, Guan Shyan
    Tang, Mao Chyuan
    Wang, Meng Fan
    Yeh, C. S.
    Chien, S. C.
    ICMTS 2009: 2009 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2009, : 133 - 136
  • [8] Improved Characterization Methodology of Gate-Bulk Leakage and Capacitance for Ultrathin Oxide Partially Depleted SOI Floating-Body CMOS
    Chen, David C.
    Lee, Ryan
    Liu, Yuan-Chang
    Lin, Guan-Shyan
    Tang, Mao-Chyuan
    Wang, Meng-Fan
    Yeh, Chune-Sin
    Chien, Shan-Chieh
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2012, 25 (02) : 155 - 161
  • [9] Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs
    Rafí, JM
    Mercha, A
    Simoen, E
    Claeys, C
    SOLID-STATE ELECTRONICS, 2004, 48 (07) : 1211 - 1221