Observation of the Interlayer Exciton Gases in WSe2-p:WSe2 Heterostructures

被引:6
|
作者
Sun, Zheng [1 ]
Beaumariage, Jonathan [1 ]
Cao, Qingrui [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [3 ]
Hunt, Benjamin Matthew [2 ]
Snoke, David [1 ]
机构
[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA
[2] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
interlayer excitons; homobilayers; thermal distribution; Auger process; lifetime;
D O I
10.1021/acsphotonics.0c00476
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Interlayer excitons (IXs) possess a much longer lifetime than intralayer excitons due to the spatial separation of the electrons and holes, and hence they have been pursued to create exciton condensates for decades. The recent emergence of 2D materials, such as transition-metal dichalcogenides (TMDs), and of their van der Waals heterostructures, in which two different 2D materials are layered together, has created new opportunities to study IXs. Here we present the observation of IX gases within two stacked structures consisting of hBN/WSe2/hBN/p:WSe2/hBN. The IX energies of the two different structures differed by 82 meV due to the different thicknesses of the hexagonal boron nitride spacer layer between the TMD layers. We demonstrate that the lifetime of the IXs is shortened when the temperature and the pump power increase. We attribute this nonlinear behavior to an Auger process.
引用
收藏
页码:1622 / 1627
页数:6
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