Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures

被引：3
|
作者：
Abderrahmane, Abdelkader [1 ]
Woo, Changlim [1 ]
Ko, Pil Ju [1 ]
机构：
[1] Chosun Univ, Dept Elect Engn, 375 Seosuk Dong, Gwangju 501759, South Korea
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2022年 / 33卷 / 15期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1007/s10854-022-08147-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we report the fabrication of WSe2/SnSe2/WSe2 van der Waals (vdW) heterostructures for potential applications as tunnel field-effect transistors (TFETs), bipolar junction transistors (BJTs), diodes, and phototransistors. We performed morphological, electrical, and optoelectronic characterizations of both back-gated WSe2/SnSe2 TFETs and WSe2/SnSe2/WSe2 BJTs. The electrical characterization of the WSe2/SnSe2 vdW-based TFETs exhibited a trend of negative differential resistance originating from band-to-band tunneling. The WSe2/SnSe2 vdW-based photodiode showed maximum photoresponsivity in the TFET of approximately 65 AW(-1) at a laser power and wavelength of 0.015 mu W and 532 nm, respectively. The results support the application of WSe2, SnSe2, and their heterostructures in multifunctional two-dimensional nanoelectronic devices.
引用
收藏
页码：11841 / 11850
页数：10
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