Morphology evolution in strain-compensated multiple quantum well structures

被引：5
|
作者：
Ledentsov, N. N. [1 ,2 ]
Shchukin, V. A. [1 ,2 ]
Rouvimov, S. [3 ]
机构：
[1] VI Systems GmbH, D-10623 Berlin, Germany
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Notre Dame, South Bend, IN 46556 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期
关键词：
VERTICAL FAR-FIELDS; BEAM DIVERGENCE; DIODE-LASERS; SUPERLATTICES; STRESSES; GROWTH;
D O I：
10.1063/1.4862436
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Morphology evolution in (In,Ga)As-Ga(As,P) strain-compensated multilayer structures is studied. The effects of nanoscale interface corrugation and phase separation are evident after the third period of the multilayer structure and become more pronounced with each new stack until the sixth period. Then, the interface stabilizes pointing to the formation of strain-balanced equilibrium interface structure. The epitaxial structure remains defect-free up to the maximum number (twenty) of periods studied. In a structure with a high lattice mismatch between the neighboring layers, In0.40Ga0.60As/GaAs0.85P0.15, clusters of dislocations are revealed already in the third period. The observed phenomena are critical for proper engineering of optoelectronic devices. (C) 2014 AIP Publishing LLC.
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页数：4
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