Effect of rf power on the structural properties of indium tin oxide thin film prepared for application in hydrogen gas sensor

被引：11

作者：

VasanthiPillay, V. ^{[1
]}

Vijayalakshmi, K. ^{[2
]}

机构：

[1] Sujatha Degree & PG Coll Women, Dept Phys, Hyderabad, Andhra Pradesh, India

[2] Bishop Heber Coll, Dept Phys, Tiruchirappalli, Tamil Nadu, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 06期

关键词：

Thin films - Hydrogen - Magnetron sputtering - Glass substrates - Gases - Tin oxides - ITO glass - Indium compounds - Scanning electron microscopy - Sensitivity analysis;

D O I：

10.1007/s10854-012-1031-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium tin oxide films were grown on glass substrate by rf magnetron sputtering at 648 K. Influence of rf power on structural properties of the ITO films was studied. XRD measurements showed (222) preferred orientation under the optimized deposition conditions. The surface morphology of ITO films analyzed by scanning electron microscope appears to be uniform over the entire surface area, the film exhibited dense layers with fine grains. Finally, ITO sensor device was fabricated and the sensing properties of the device towards hydrogen gas were investigated. The variation in sensitivity of the ITO sensor with operating temperature and with concentration of hydrogen gas was studied. The maximum response was found to be 1.6 at 400 K, for 1,000 ppm of hydrogen gas, and the response of the sensor was found to decrease with increase in concentration of H-2 gas.

引用

页码：1895 / 1899

页数：5

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