Temperature compensation of piezoresistive micro-machined porous silico n pressure sensor by ANN

被引：49
|
作者：
Pramanik, C [1 ]
Islam, T [1 ]
Saha, H [1 ]
机构：
[1] Jadavpur Univ, IC Design & Fabricat Ctr, Dept Elect & Telecommun Engn, Kolkata 700032, W Bengal, India
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 2-4期
关键词：
D O I：
10.1016/j.microrel.2005.04.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Porous silicon based micro-machined peizoresistive pressure sensors are fabricated and tested in the range of 0-1 bar and temperature range of 25-80 degrees C. The dependence of pressure sensitivity on the variation of ambient temperature is investigated. An intelligent online temperature compensation scheme using ANN technique has been described. The proposed scheme leads to an error reduction of approximately 98% from temperature uncompensated value. A hardware implementation of the proposed scheme using micro-controller is also described. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：343 / 351
页数：9
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