Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry

被引：19

作者：

Ota, Kensuke ^{[1
]}

Saitoh, Masumi ^{[1
]}

Tanaka, Chika ^{[1
]}

Nakabayashi, Yukio ^{[1
]}

Numata, Toshinori ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp R&D Ctr, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 12期

关键词：

Self-heating effect (SHE); silicon nanowire (NW) transistor (NW Tr.); silicon on insulator (SOI);

D O I：

10.1109/TED.2012.2218110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural parameters. Temperature rise in NW Tr. is found to be independent of the NW size in sub-100-nm regions when compared at the same total power consumption. This is because the heat generated by the drain current is spread to the area larger than the NW channel. Dependences of temperature rise on other parameters such as gate oxide or buried oxide thickness suggest that heat dissipates mainly via source/drain or substrate not via the gate electrode.

引用

页码：3239 / 3242

页数：4

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