A thorough analysis of self-heating effects for SOI MOSFETs on SIMOX and UNIBOND substrates

被引：2

作者：

Jomaah, J ^{[1
]}

Rauly, E ^{[1
]}

Ghibaudo, G ^{[1
]}

Balestra, F ^{[1
]}

机构：

[1] ENSERG, UMR CNRS, Lab Phys Composants Semicond, F-38016 Grenoble, France

来源：

JOURNAL DE PHYSIQUE IV | 1998年 / 8卷 / P3期

关键词：

D O I：

10.1051/jp4:1998304

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The impact of the self heating effect (SH) on the low temperature operation of MOSFET/SOI is investigated with the help of a simple self heating model. Both the SIMOX and UNIBOND substrates are analyzed. The variation with temperature of the buried oxide thermal conductivity extracted from the thermal resistance is found to be in good agreement with the experimental data for fused silica. The influence of the depletion of the thin Si film is carefully analysed and the existence of an optimum substrate temperature is demonstrated allowing better device performance to be achieved.

引用

页码：17 / 20

页数：4

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