Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers

被引：1

作者：

Bibic, N. ^{[1
,2
]}

Milinovic, V. ^{[1
]}

Milosavljevic, M. ^{[1
]}

Schrempel, F. ^{[3
]}

Siljegovic, M. ^{[2
]}

Lieb, K. P. ^{[2
]}

机构：

[1] VINCA Inst Nucl Sci, Belgrade, Serbia

[2] Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany

[3] Univ Jena, Fac Phys, D-07743 Jena, Germany

来源：

JOURNAL OF MICROSCOPY | 2008年 / 232卷 / 03期

关键词：

Amorphous semi-conductors; ion beam mixing; RBS; SEM; TEM;

D O I：

10.1111/j.1365-2818.2008.02143.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.

引用

页码：539 / 541

页数：3

共 50 条

[31] Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation
Dhar, S
Milosavljevic, M
Bibic, N
Lieb, KP
PHYSICAL REVIEW B, 2002, 65 (02) : 1 - 7
[32] Processes of mixing in multilayered periodic compositions of Mo/Si under action of an irradiation by ions of Ar
Zubarev, E. M.
Mel'nyk, V. P.
Kondratenko, V. V.
Pen'kov, O. V.
Ponomarenko, O. G.
Romanyuk, B. M.
Sevryukova, V. A.
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2007, 29 (12): : 1555 - 1570
[33] Mossbauer optimization of the direct synthesis of β-FeSi2 by ion beam mixing of Fe/Si bilayers
Schaaf, P
Milosavljevic, M
Dhar, S
Bibic, N
Lieb, KP
Wölz, M
Principi, G
HYPERFINE INTERACTIONS, 2002, 139 (1-4): : 615 - 621
[34] ION-BEAM MIXING EFFECTS INDUCED IN THE LATENT TRACKS OF SWIFT HEAVY-IONS IN A FE/SI MULTILAYER
DUFOUR, C
BAUER, P
MARCHAL, G
GRILHE, J
JAOUEN, C
PACAUD, J
JOUSSET, JC
EUROPHYSICS LETTERS, 1993, 21 (06): : 671 - 677
[35] Mössbauer Optimization of the Direct Synthesis of β-FeSi2 by Ion Beam Mixing of Fe/Si Bilayers
P. Schaaf
M. Milosavljevic
S. Dhar
N. Bibic
K.-P. Lieb
M. Wölz
G. Principi
Hyperfine Interactions, 2002, 139-140 : 615 - 621
[36] 1.5x10-9 Ω.cm2 Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Yu, H.
Schaekers, M.
Rosseel, E.
Peter, A.
Lee, J. -G.
Song, W. -B.
Demuynck, S.
Chiarella, T.
Ragnarsson, L-A.
Kubicek, S.
Everaert, J.
Horiguchi, N.
Barla, K.
Kim, D.
Collaert, N.
Thean, A. V. -Y.
De Meyer, K.
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
[37] Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy
Bibic, N.
Lieb, K. P.
Milinovic, V.
Mitric, M.
Siljegovic, M.
Zhang, K.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (10): : 2498 - 2502
[38] Fine diffraction effects in Si single crystals implanted with fast Ar ions and annealed
Zymierska, D
Godwod, K
Adamczewska, J
Auleytner, J
Choinski, J
Reginski, K
ACTA PHYSICA POLONICA A, 2002, 101 (05) : 743 - 750
[39] Effects of annealing in Be/W and Be/C bilayers deposited on Si(001) substrates with Fe buffer layers
Schinteie, G.
Greculeasa, S. G.
Palade, P.
Lungu, G. A.
Porosnicu, C.
Jepu, I.
Lungu, C. P.
Filoti, G.
Kuncser, V.
JOURNAL OF NUCLEAR MATERIALS, 2015, 457 : 220 - 226
[40] Formation of iron-nitrides by irradiation of 57Fe/Si bilayers with N2+ ions
Bibic, N
Milinovic, V
Dhar, S
Lieb, KP
Milosavljevic, M
Siljegovic, M
Perusko, D
Schaaf, P
THIN SOLID FILMS, 2004, 459 (1-2) : 23 - 27

← 1 2 3 4 5 →