Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers

被引：1

作者：

Bibic, N. ^{[1
,2
]}

Milinovic, V. ^{[1
]}

Milosavljevic, M. ^{[1
]}

Schrempel, F. ^{[3
]}

Siljegovic, M. ^{[2
]}

Lieb, K. P. ^{[2
]}

机构：

[1] VINCA Inst Nucl Sci, Belgrade, Serbia

[2] Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany

[3] Univ Jena, Fac Phys, D-07743 Jena, Germany

来源：

JOURNAL OF MICROSCOPY | 2008年 / 232卷 / 03期

关键词：

Amorphous semi-conductors; ion beam mixing; RBS; SEM; TEM;

D O I：

10.1111/j.1365-2818.2008.02143.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.

引用

页码：539 / 541

页数：3

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