Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys

被引：75

作者：

Olson, B. V. ^{[1
]}

Shaner, E. A. ^{[1
]}

Kim, J. K. ^{[1
]}

Klem, J. F. ^{[1
]}

Hawkins, S. D. ^{[1
]}

Flatte, M. E. ^{[2
,3
]}

Boggess, T. F. ^{[2
,3
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[3] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

关键词：

LIFETIME; HETEROSTRUCTURES; SEMICONDUCTORS; ABSORPTION;

D O I：

10.1063/1.4817400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Minority carrier lifetimes in doped and undoped mid-wave infrared InAs/InAsSb type-II superlattices (T2SLs) and InAsSb alloys were measured from 77-300 K. The lifetimes were analyzed using Shockley-Read-Hall (SRH), radiative, and Auger recombination, allowing the contributions of the various recombination mechanisms to be distinguished and the dominant mechanisms identified. For the T2SLs, SRH recombination is the dominant mechanism. Defect levels with energies of 130 meV and 70 meV are determined for the undoped and doped T2SLs, respectively. The alloy lifetimes are limited by radiative and Auger recombination through the entire temperature range, with SRH not making a significant contribution. (C) 2013 AIP Publishing LLC.

引用

页数：4

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