Ge/Si quantum dots thin film solar cells

被引：19

作者：

Liu, Zhi ^{[1
]}

Zhou, Tianwei ^{[1
]}

Li, Leliang ^{[1
]}

Zuo, Yuhua ^{[1
]}

He, Chao ^{[1
]}

Li, Chuanbo ^{[1
]}

Xue, Chunlai ^{[1
]}

Cheng, Buwen ^{[1
]}

Wang, Qiming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

基金：

中国国家自然科学基金;

关键词：

ENHANCED PHOTOLUMINESCENCE; GE ISLANDS; TEMPERATURE; EFFICIENCY; GAP;

D O I：

10.1063/1.4818999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film p-i-n solar cells (SCs) with 30 bilayers undoped or p-type self-assembled Ge/Si quantum dots (QDs) were fabricated on n(+)-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. Compared with the SCs without Ge QDs, the external quantum efficiency in infrared region and the short-circuit current densities of the SCs with Ge QDs increased. However, their open-circuit voltages and efficiencies decreased. The open circuit voltages of p-type Ge/Si QDs SCs recovered significantly at low temperature, which was due to the suppression of recombination centers and longer carrier lifetime. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 50 条

[21] Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)
Boscherini, F
Capellini, G
Di Gaspare, L
Rosei, F
Motta, N
Mobilio, S
APPLIED PHYSICS LETTERS, 2000, 76 (06) : 682 - 684
[22] Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots
Shegai, OA
Berezovsky, AY
Nikiforov, AI
Ul'yanov, VV
PHYSICS OF THE SOLID STATE, 2005, 47 (01) : 30 - 33
[23] Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots
O. A. Shegai
A. Yu. Berezovsky
A. I. Nikiforov
V. V. Ul’yanov
Physics of the Solid State, 2005, 47 : 30 - 33
[24] Excitons in Ge/Si double quantum dots
A. I. Yakimov
A. A. Bloshkin
A. V. Dvurechenskii
JETP Letters, 2009, 90 : 569 - 573
[25] Photoresponse in Ge/Si nanostructures with quantum dots
Nikolenko, A. S.
Kondratenko, S. V.
Vakulenko, O. V.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2006, 9 (01) : 32 - 35
[26] Admittance spectroscopy of Ge quantum dots in Si
Asperger, T
Miesner, C
Brunner, K
Abstreiter, G
THIN SOLID FILMS, 2000, 380 (1-2) : 227 - 229
[27] Lateral photodetectors with Ge quantum dots in Si
Miesner, C
Brunner, K
Abstreiter, G
INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (3-5) : 461 - 465
[28] Electronic structure of Ge/Si quantum dots
Dvurechenskii, AV
Nenashev, AV
Yakimov, AI
NANOTECHNOLOGY, 2002, 13 (01) : 75 - 80
[29] Electronic structure of Ge/Si quantum dots
Dvurechenskii, AV
Nenashev, AV
Yakimov, AI
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (02): : 157 - 160
[30] Photoluminescence study of Si/Ge quantum dots
Larsson, M
Elfving, A
Holtz, PO
Hansson, GV
Ni, WA
SURFACE SCIENCE, 2003, 532 : 832 - 836

← 1 2 3 4 5 →