Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

This study reports on the fabrication and characterization of thin-film transistors (TFTs) based on indium-gallium-zinc-oxide (IGZO) with various source- and drain-region metals (Pt, W and Ti). The performance of the IGZO transistors is compared to TFTs based on hydrogenated amorphous silicon (a-Si:H) with Pt source- and drain-regions. From the output characteristics maximum saturation mobilities of mu =0.45 cm(2)/Vs for a-Si:H, and mu = 24 to 50 cm(2)/Vs for IGZO TFTs are extracted, which are competitive to high-performance thin-film transistors. The study reveals a general influence of the source- and drain-electrode material on the maximum saturation mobility and inverse sub-threshold slope.