Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1.0 A/mm

被引：0
|
作者：
Zhou, Hong [1 ]
Ye, Peide D. [1 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA
来源：
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [41] Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
    Yang, Gwangseok
    Jang, Soohwan
    Ren, Fan
    Pearton, Stephen J.
    Kim, Jihynn
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (46) : 40471 - 40476
  • [42] Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors
    Polyakov, Alexander Y.
    Smirnov, Nikolai B.
    Shchemerov, Ivan V.
    Chernykh, Sergey V.
    Oh, Sooyeoun
    Pearton, Stephen J.
    Ren, Fan
    Kochkova, Anastasia
    Kim, Jihyun
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (07) : Q3013 - Q3018
  • [43] Design of Ga2O3 modulation doped field effect transistors
    Mastro, Michael A.
    Tadjer, Marko J.
    Kim, Jihyun
    Ren, Fan
    Pearton, Stephen J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (02):
  • [44] Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors
    Yuvaraja, Saravanan
    Khandelwal, Vishal
    Krishna, Shibin
    Lu, Yi
    Liu, Zhiyuan
    Kumar, Mritunjay
    Tang, Xiao
    Garcia, Glen Isaac Maciel
    Chettri, Dhanu
    Liao, Che-Hao
    Li, Xiaohang
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (05) : 6088 - 6097
  • [45] Enhancement-Mode β-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
    Qin, Yuan
    Dong, Hang
    Long, Shibing
    He, Qiming
    Jian, Guangzhong
    Zhang, Ying
    Zhou, Xuanze
    Yu, Yangtong
    Hou, Xiaohu
    Tan, Pengju
    Zhang, Zhongfang
    Liu, Qi
    Lv, Hangbing
    Liu, Ming
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (05) : 742 - 745
  • [46] Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
    Ren, F
    Hong, M
    Chu, SNG
    Marcus, MA
    Schurman, MJ
    Baca, A
    Pearton, SJ
    Abernathy, CR
    APPLIED PHYSICS LETTERS, 1998, 73 (26) : 3893 - 3895
  • [47] Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer
    Ge, Lei
    Chen, Qiu
    Wang, Shuai
    Mu, Wenxiang
    Xin, Qian
    Jia, Zhitai
    Xu, Mingsheng
    Tao, Xutang
    Song, Aimin
    CRYSTALS, 2022, 12 (07)
  • [48] Demonstration of Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
    Ren, F
    Hong, M
    Kuo, JM
    Hobson, WS
    Tsai, HS
    Lothian, JR
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Lin, J
    Chen, YK
    Cho, AY
    55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 78 - 79
  • [49] Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET's
    Ren, F
    Kuo, JM
    Hong, M
    Hobson, WS
    Lothian, JR
    Lin, J
    Tsai, HS
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Chen, YK
    Cho, AY
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) : 309 - 311
  • [50] Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier
    Liu, Qi
    Zhou, Xuanze
    He, Qiming
    Hao, Weibing
    Zhao, Xiaolong
    Hua, Mengyuan
    Xu, Guangwei
    Long, Shibing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (07) : 3762 - 3767
12345