Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

被引：2

作者：

Ge, Lei ^{[1
,2
]}

Chen, Qiu ^{[1
,2
]}

Wang, Shuai ^{[2
]}

Mu, Wenxiang ^{[1
,3
]}

Xin, Qian ^{[2
]}

Jia, Zhitai ^{[1
,3
]}

Xu, Mingsheng ^{[1
,2
,3
]}

Tao, Xutang ^{[3
]}

Song, Aimin ^{[2
,4
]}

机构：

[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China

[2] Shandong Univ, Shandong Technol Ctr Nanodevices & Integrat, Sch Microelect, Jinan 250100, Peoples R China

[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[4] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

来源：

CRYSTALS | 2022年 / 12卷 / 07期

关键词：

Ga2O3; field-effect transistors; enhancement-mode; local thinning;

D O I：

10.3390/cryst12070897

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

beta-Ga2O3 field-effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr-doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from -3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement-mode Ga2O3 FETs.

引用

页数：8

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