Ruthenium disulfide thin films prepared by the successive ionic layer adsorption and reaction (SILAR) method

被引：0
|
作者：
Liu, XX [1 ]
Hin, ZG [1 ]
Zhao, J [1 ]
Bu, SJ [1 ]
机构：
[1] Tianjin Univ, Key Lab Adv Ceram & Machining Technol, Minist Educ, Tianjin 300072, Peoples R China
来源：
RARE METALS | 2004年 / 23卷 / 01期
关键词：
thin film; SILAR method; ruthenium disulfide;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
RuS2 thin films were prepared by the cost-effective chemical method-successive ionic layer adsorption and reaction (SILAR). The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity methods. The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500degreesC for 30 min. The band gap of the as-deposited films is found to be 1.85 eV, and the electrical resistivity of them is in the order of 10(5) Omega(.)cm.
引用
收藏
页码：93 / 96
页数：4
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